參數(shù)資料
型號： 2SC4139
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開關(guān)晶體管）)
中文描述： 15 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝： MT-100, TO-3P, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 25K
代理商： 2SC4139
91
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
2S C4139
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4139
500
400
10
15(
Pulse
30)
5
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4139
100
max
100
max
400
min
10to30
0.5
max
1.3
max
10
typ
85
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=1.6A
I
C
=8A, I
B
=1.6A
V
CE
=12V, I
E
=–1.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
C
C
(
B
B
(
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0.1
0.05
0.03
1
5
10
20
0.5
0
1.5
0.5
1.0
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
2
–55C
V
CE
(sat)
1
2
5
C
C
a
s
e
e
m
p
)
1
0.5
10
15
5
0.1
0.5
5
8
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:I
B2
=10:1:–2
0.1
1
2
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
120
100
50
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
5
500
100
1
10
50
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1A
Duty:less than 1%
10
50
5
100
500
5
1
10
50
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
100
μ
s
0
10
4
2
8
6
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(sTm
–Csm
2 se)
0.02
0.1
0.05
1
15
10
5
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
0
0
5
10
15
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
1.2A
600mA
800mA
400mA
200mA
1.5A
I
B
=100mA
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
25
8
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–1.6
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
3
max
t
f
(
μ
s)
0.5
max
I
(A)
0.8
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
相關(guān)PDF資料
PDF描述
2SC4140 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開關(guān)晶體管）)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC4140 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 400V 18A TO3P 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR MT100 500V 18A 130WBCE
2SC4140_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SC4142 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-3P-FM1500V 5A 50W BCE
2SC4143 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3P
2SC4146 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23
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