參數(shù)資料
型號： 2SC3834
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)
中文描述： 7 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： MT-25, TO-220, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 23K
代理商： 2SC3834
74
Silicon NPN Triple Diffused Planar Transistor
(Switching Transistor)
Application :
Humidifier, DC-DC Converter, and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3834
200
120
8
7(
Pulse
14)
3
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC3834
100
max
100
max
120
min
70to220
0.5
max
1.2
max
30
typ
110
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=200V
V
EB
=8V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
I
C
=3A, I
B
=0.3A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
2S C3834
(Ta=25°C)
(Ta=25°C)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
50
R
L
(
)
16.7
I
C
(A)
3
V
(V)
–5
I
B2
(A)
–0.6
t
on
(
μ
s)
0.5
max
t
stg
(
μ
s)
3.0
max
t
f
(
μ
s)
0.5
max
I
(A)
0.3
V
(V)
10
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0.005
2
2.6
1
0.01
0.1
0.05
1
0.5
Base Current I
B
(A)
C
C
(
I
C
=
3
5
0.02
0.1
0.5
1
7
5
20
50
100
200
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
–0.01
–0.1
–1
–0.05
–0.5
–5
20
10
0
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
10
120
50
5
200
0.05
1
0.5
0.1
20
10
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
100ms
1m
50
40
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
0
1
2
3
4
5
6
7
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
60mA
40mA
20mA
100mA
150mA
200mA
I
B
=10mA
0
7
2
3
4
5
6
1
0
1.1
1.0
0.5
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15 aeep
2CaTp
–CaTp
(V
CE
=4V)
0.01
0.05
0.1
0.5
1
5
7
20
50
300
100
Collector Current I
C
(A)
D
F
25C
–30C
125C
0.3
0.5
1
4
1
10
100
1000
Time t(ms)
T
θ
j
(
External Dimensions
MT-25(TO220)
B
E
2.5
2.5
C
1
±
1
4
8
±
1.35
0.65
+0.2
-0.1
10.2
±0.2
3.75
±0.2
3
±
4.8
±0.2
1.4
2.0
±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC3835 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 120V 7A TO3P
2SC3837KT146 制造商:ROHM Semiconductor 功能描述:
2SC3837KT146N 功能描述:兩極晶體管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC3837KT146N/P 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, RF, 18V, 50mA, SMT3, 2
2SC3837KT146P 功能描述:兩極晶體管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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