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參數(shù)資料
| 型號： | 2SC3576 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistors for High hFE, Low-Frequency General-Purpose Amplifier Applications(高直流電流增益，低頻通用放大器應用的NPN硅外延平面型晶體管) |
| 中文描述： | 瑞展HFE的高硅，低晶體管頻率通用放大器應用（高直流電流增益，低頻通用放大器應用的npn型硅外延平面型晶體管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 108K |
| 代理商： | 2SC3576 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High h
FE
, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN1799D
2SC3576
N2098HA (KT)/6140MO/4227KI/N275KI/3D185KI, TS No.1799–1/3
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2033
[2SC3576]
Applications
· LF general-purpose amplifiers, various drivers,
muting circuit.
Features
· Adoption of FBET process.
· High DC current gain (h
FE
=800 to 3200).
· Low collector-to-emitter saturation voltage
(V
CE(sat)
≤
0.5V).
· High V
EBO
(V
EBO
≥
15V).
C
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at Ta = 25C
B : Base
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E : Emitter
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