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參數資料
| 型號： | 2SC3507 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 5 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SC-92, TOP-3F-A1, FULL PACK-3 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 60K |
| 代理商： | 2SC3507 |
2
Power Transistors
2SC3507
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
150
125
100
25
75
50
0
100
80
60
40
20
(1)
(2)
(3)
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
10
8
6
4
2
T
C
=25C
200mA
100mA
20mA
300mA
400mA
500mA
I
B
=800mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
–25C
25C
T
C
=100C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
T
C
=–25C
25C
100C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
T
C
=100C
25C
–25C
V
CE
=5V
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
=5V
f=1MHz
T
C
=25C
T
T
0
8
2
6
4
7
1
Collector current I
C
(A)
5
3
0.01
10
1
0.1
0.03
0.3
3
t
stg
t
f
t
on
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=–I
B2
)
V
CC
=250V
T
C
=25C
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=1ms
10ms
DC
Collector to emitter voltage V
CE
(V)
C
C
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