參數(shù)資料
型號: 2SC3179
廠商: SANKEN ELECTRIC CO LTD
元件分類: 功率晶體管
英文描述: Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
中文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: MT-25, TO220, 3 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 22K
代理商: 2SC3179
62
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1262)
2S C3179
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3179
80
60
6
4
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC3179
100
max
100
max
60
min
40
min
0.6
max
15
typ
60
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=80V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=1V
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
1
2
3
4
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
I
B
=100mA
40mA
60mA
80mA
30mA
10mA
20mA
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0.005
1.0
0.5
0.01
0.1
0.05
1
0.5
Base Current I
B
(A)
C
C
(
I
C
=1A
2A
3A
0
4
2
1
3
0.4
1.2
0.8
0.6
Base-Emittor Voltage V
BE
(V)
1.0
C
C
(
(V
CE
=4V)
15CCs ep
2 Cs–0CCs ep
0.01
0.1
0.5
1
4
20
50
100
500
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
(V
CE
=4V)
0.02
0.1
0.5
4
1
Collector Current I
C
(A)
D
F
20
50
100
200
125C
25C
–30C
0.5
1
5
1
10
100
1000
Time t(ms)
T
θ
j
(
10
50
3
100
0.2
1
0.5
10
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
–0.0
–0.1
–0.5
–1
–4
20
10
30
40
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
B
E
2.5
2.5
C
1
±
1
4
8
±
1.35
0.65
+0.2
-0.1
10.2
±0.2
3.75
±0.2
3
±
4.8
±0.2
1.4
2.0
±0.1
a
b
External Dimensions
MT-25(TO220)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
10
2
R
L
(
)
I
C
(A)
V
(V)
–5
I
(mA)
–200
t
on
(
μ
s)
0.2
typ
t
stg
(
μ
s)
1.9
typ
t
f
(
μ
s)
0.29
typ
I
(mA)
200
V
(V)
10
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
Absolute maximum ratings
相關(guān)PDF資料
PDF描述
2SC3183 ECONOLINE: RSZ/P - 1kVDC
2SC3184 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
2SC3209 NPN SILICON POWER TRANSISTOR
2SC3209K SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
2SC3209L TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-221VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC3180 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON NPN TRIPLE DIFFUSED TYPE
2SC3180N 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
2SC3180N TOSHIBA 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR TO 80V 6A 60W BCE
2SC3181 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:POWER AMPLIFIER APPLICATION
2SC3181N 制造商:Distributed By MCM 功能描述:120V 8A 80W Bce TO-3P Toshiba Transistor 2S