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參數(shù)資料
| 型號(hào)： | 2SC3004 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial(外延NPN晶體管) |
| 中文描述： | npn型硅外延（外延npn型晶體管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | 2SC3004 |
2SC3004
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
Tj
30
V
Collector to emitter voltage
30
V
Emitter to base voltage
7
V
Collector current
3
A
Collector peak current
4
A
Collector power dissipation
1
10
W
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
—
V
I
C
= 1 mA, R
BE
= _
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 0.1 mA, I
C
= 0
Collector cutoff current
I
CEO
h
FE
V
CE(sat)
—
—
20
μA
V
CE
= 24 V, R
BE
= _
V
CE
= 3 V, I
C
= 1.5 A*
I
C
= 1.5 A, I
B
= 3 mA*
DC current transfer ratio
2000
—
50000
1
Collector to emitter saturation
voltage
—
—
1.5
V
1
—
—
2.0
V
I
C
= 3 A, I
B
= 30 mA*
I
C
= 1.5 A, I
B
= 3 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
—
—
2.0
V
1
—
—
3.5
V
I
C
= 3 A, I
B
= 30 mA*
I
C
= 1.5 A, I
B1
= –I
B2
= 3 mA
V
CC
= 30 V
1
Turn on time
t
on
—
0.4
—
μs
Turn off time
t
off
t
stg
—
1.2
—
μs
Storage time
Note:
—
0.8
—
μs
1. Pulse test
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