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參數(shù)資料
| 型號： | 2SC2979 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 45K |
| 代理商： | 2SC2979 |
2SC2979
4
Reverse Bias Area of Safe Operation
10
8
6
4
2
0
200
I
B2
= –0.6 A
600 V, 6 A
800 V, 3 A
850 V, 1.0 A
400
600
800
1,000
C
C
Collector to emitter voltage V
CE
(V)
Collector to Emitter Voltage
vs. Base to Emitter Resistance
1,000
I
C
= 1 mA
900
800
700
100
1 k
Base to emitter resistance R
BE
(
)
10 k
100 k
1 M
C
(
Typical Output Characteristics
T
C
= 25
°
C
I
B
= 0
0.05 A
0.1
0.2
0.3
0.4
0.5
0.6
07
2.5
2.0
1.5
1.0
0.5
0
1
2
Collector to emitter voltage V
CE
(V)
5
4
3
C
C
T
C
= 25
°
C
V
CE
= 5 V
2.5
2.0
1.5
1.0
0.5
0
0.4
0.8
Base to emitter voltage V
BE
(V)
1.2
1.6
2.0
C
C
Typical Transfer Characteristics
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|---|---|
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| 2SC2986 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9240V .05A .3W ECB |
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