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參數(shù)資料
| 型號(hào)： | 2SC2855 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 45K |
| 代理商： | 2SC2855 |
2SC2855, 2SC2856
3
Electrical Characteristics
(Ta = 25°C)
2SC2855
2SC2856
Item
Symbol Min
Typ
Max Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
90
—
—
120
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
90
—
—
120
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
0.1
—
—
0.1
μ
A
μ
A
V
CB
= 70 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA*
2
I
C
= 10 mA, I
B
= 1 mA*
2
Emitter cutoff current
—
—
0.1
—
—
0.1
DC current transfer ratio
250
—
800
250
—
800
Collector to emitter
saturation voltage
—
0.05
0.10 —
0.05 0.10
V
Base to emitter saturation
voltage
V
BE(sat)
—
0.7
1.0
—
0.7
1.0
V
Gain bandwidth product
f
T
Cob
—
310
—
—
310
—
MHz
V
CE
= 6 V, I
C
= 10 mA
V
= 10 V, I
E
= 0,
f = 1 MHz
Collector output
capacitance
—
3
—
—
3
—
pF
Noise figure
NF
—
0.15
1.5
—
0.15 1.5
dB
V
CE
= 6 V, I
= 0.1 mA,
R
g
= 10 k
, f = 1 kHz
V
CE
= 6 V, I
= 0.1 mA,
R
g
= 10 k
, f = 10 Hz
nV/
√
Hz
V
CE
= 6 V, I
= 10 mA,
R
g
= 0, f = 1 kHz
—
0.2
2.0
—
0.2
2.0
dB
Noise voltage referred to
input
Notes: 1. The 2SC2855 and 2SC2856 are grouped by h
FE
as follows.
2. Pulse test
D
E
e
n
—
0.7
—
—
0.7
—
250 to 500
400 to 800
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