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參數(shù)資料
| 型號(hào)： | 2SC2776A |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SOT-346 |
| 中文描述： | 晶體管|晶體管|叩| 20V的五（巴西）總裁| 30mA的一（c）|的SOT - 346 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SC2776A |
1
Transistor
2SC2778
Silicon NPN epitaxial planer type
For high-frequency amplification
I
Features
G
Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
f
T
C
re
Conditions
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
min
30
20
5
70
150
typ
230
1.3
max
250
Unit
V
V
V
MHz
pF
Marking symbol :
K
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 160
110 ~ 250
Marking Symbol
KB
KC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC2776B | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SOT-346 |
| 2SC2776C | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SOT-346 |
| 2SC2784 | NPN SILICON TRANSISTOR |
| 2SC2784E | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-221VAR |
| 2SC2784F | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-221VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2778 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC27780CL | 功能描述:TRANS NPN 20VCEO 30MA MINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC2780-T1-AZ-NK | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2782A | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 16V 20A 6-Pin 2-13C1A |
| 2SC2784 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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