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參數(shù)資料
| 型號： | 2SC2512 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused |
| 中文描述： | 硅npn型三重?cái)U(kuò)散 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SC2512 |
2SC2512
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
30
V
Collector to emitter voltage
20
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
3
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
CE(sat)
—
—
0.5
μ
A
V
CB
= 10 V, I
E
= 0
I
C
= 20 mA, I
B
= 4 mA
Collector to emitter saturation
voltage
—
—
1
V
DC current transfer ratio
h
FE
Cre
30
—
—
V
CE
= 10 V, I
C
= 10 mA
V
= 10 V, Emitter common,
f = 1 MHz
Reverse transfer capacitance
—
0.35
0.45
pF
Gain bandwidth product
f
T
r
bb’
C
C
600
900
—
MHz
V
CE
= 10 V, I
C
= 10 mA
V
= 10 V, I
C
= 5 mA,
f = 31.8 MHz
Base time constant
—
—
20
ps
Conversion gain
CG
16
20
—
dB
V
CC
= 12 V, I
C
= 2 mA,
f
in
= 200 MHz,
f
OSC
= 260 MHz,
f
out
= 60 MHz
V
CC
= 12 V, I
= 2 mA,
f
OSC
= 260 MHz, R
g
= 50
,
f
in
= 200 MHz
Noise figure
NF
—
3.8
5.5
dB
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