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參數(shù)資料
| 型號： | 2SC2459BL |
| 英文描述： | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SPAK |
| 中文描述： | 晶體管|晶體管| npn型| 120伏特五（巴西）總裁| 100mA的一（c）| SPAK |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 2SC2459BL |
3
Transistor
2SC2404
PG — I
E
NF — I
E
b
ie
— g
ie
b
re
— g
re
b
fe
— g
fe
b
oe
— g
oe
Emitter current I
E
(mA)
P
0
–1
–10
–100
– 0.3
–3
–30
40
30
10
25
35
20
5
15
f=100MHz
R
=50
Ta=25C
V
CE
=10V
6V
0
–1
–10
–100
– 0.3
Emitter current I
E
(mA)
–3
–30
12
10
8
6
4
2
f=100MHz
R
=50k
Ta=25C
V
CE
=6V, 10V
N
Input conductance g
ie
(mS)
I
i
0
15
9
3
6
12
0
20
16
12
8
4
18
14
10
6
2
y
ie
=g
+jb
ie
V
CE
=10V
100
100
–1mA
–2mA
–4mA
–7mA
I
E
=
150
f=10.7MHz
58
58
25
25
– 0.5
0
– 0.1
– 0.4
– 0.2
– 0.3
–6
0
–1
–2
–3
–4
–5
y
re
=g
+jb
re
V
CE
=10V
f=150MHz
I
E
=–7mA
–4mA
–1mA
25
58
100
10.7
Reverse transfer conductance g
re
(mS)
R
r
0
100
80
20
60
40
–120
0
–20
–40
–60
–80
–100
y
fe
=g
+jb
fe
V
CE
=10V
f=150MHz
10.7
58
– 0.4mA
–1mA
–2mA
–4mA
I
E
=–7mA
100
100
100
150
150
58
Forward transfer conductance g
fe
(mS)
F
f
Output conductance g
oe
(mS)
O
o
0
0.5
0.4
0.1
0.3
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
=g
+jb
oe
V
CE
=10V
f=10.7MHz
I
E
=
–2mA
–4mA
–7mA
–
58
25
100
150
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2459-BL(F) | 制造商:Toshiba 功能描述:NPN 120V 0.1A 350 to 700 MINI Bulk |
| 2SC2459GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SPAK |
| 2SC2459-GR(F) | 制造商:Toshiba 功能描述:NPN 120V 0.1A 200 to 400 MINI Bulk |
| 2SC2460 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC2461A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
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