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參數(shù)資料
| 型號： | 2SC1921 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused |
| 中文描述： | 硅npn型三重擴散 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2SC1921 |
2SC1921
4
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current I
C
(mA)
1
2
50
5
10
20
0
0.1
0.2
0.3
0.5
0.4
C
V
C
25
–25
Ta = 75
°
C
I
C
= 10 I
B
Gain Bandwidth Product vs.
Collector Current
Collector Current I
C
(mA)
1
2
5
20
10
10
20
50
200
100
G
T
V
CE
= 6 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage V
CB
(V)
5
2
100 200
10
50
20
0.2
0.5
2
1.0
10
20
5
C
o
(
f = 1 MHz
I
E
= 0
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