參數(shù)資料
型號: 2SC1906
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial Planar
中文描述: 硅瑞展
文件頁數(shù): 2/8頁
文件大?。?/td> 45K
代理商: 2SC1906
2SC1906
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
30
V
Collector to emitter voltage
19
V
Emitter to base voltage
2
V
Collector current
50
mA
Emitter current
–50
mA
Collector power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
19
V
I
C
= 3 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
2
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
f
T
Cob
0.5
μ
A
V
CB
= 10 V, I
E
= 0
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
I
C
= 20 mA, I
B
= 4 mA
DC current transfer ratio
40
Gain bandwidth product
600
1000
MHz
Collector output capacitance
1.0
2.0
pF
Collector to emitter saturation
voltage
V
CE(sat)
0.2
1.0
V
Base time constant
r
bb’
C
C
10
25
ps
V
= 10 V, I
C
= 10 mA,
f = 31.8 MHz
Power gain
PG
33
dB
V
CE
= 10 V,
I
C
= 5 mA
V
CE
= 10 V,
I
C
= 5 mA
f = 45 MHz
18
dB
f = 200 MHz
相關PDF資料
PDF描述
2SC1907 Silicon NPN Epitaxial Planar
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