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| 型號： | 2SC1623L7 |
| 廠商： | NEC Corp. |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SC1623L7 |
SILICON TRANSISTOR
2SC1623
FEATURES
High DC Current Gain: h
FE
= 200 TYP.
(V
CE
= 6.0 V, I
C
= 1.0 mA)
High Voltage: V
CEO
= 50 V
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Current (TA = 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Maximum Power Dissipation
Total Power Dissipation
at 25 C Ambient Temperature P
T
Maximum Temperatures
J unction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
60
50
5.0
100
V
V
V
mA
200
mW
T
j
T
stg
150
C
C
–55 to +150
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
PACKAGE DIMENSIONS
in millimeters
1984
DATA SHEET
1.5
2.8 ± 0.2
0.65
–0.15
0
+
–
2
1
3
0
+
–
0
0
2
0
1
0
0
+
–
Marking
1: Emitter
2: Base
3: Collector
Document No. TC-1481C
(O.D. No. TC-5172C)
Date Published J uly 1995 P
Printed in J apan
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
μ
A
V
CB
= 60 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
μ
A
V
EB
= 5.0 V, I
C
= 0
DC Current Gain
h
FE
90
200
600
V
CE
= 6.0 V, I
C
= 1.0 mA
*
Collector Saturation Voltage
V
CE(sat)
0.15
0.3
V
I
C
= 100 mA, I
B
= 10 mA
*
Base to Saturation Voltage
V
BE(sat)
0.86
1.0
V
I
C
= 100 mA, I
B
= 10 mA
*
Base Emitter Voltage
V
BE
0.55
0.62
0.65
V
V
CE
= 6.0 V, I
C
= 1.0 mA
*
Gain Bandwidth Product
f
T
250
MHz
V
CE
= 6.0 V, I
E
= –10 mA
Output Capacitance
C
ob
3.0
pF
V
CB
= 6.0 V, I
E
= 0, f = 1.0 MHz
*
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2 %
h
FE
Classification
Marking
L4
L5
L6
L7
h
FE
90 to 180
135 to 270
200 to 400
300 to 600
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SC1623-L7 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
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| 2SC1623-T1B-A(L5) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC1623-T1B-A(L6) | 制造商:Renesas Electronics 功能描述:NPN |
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