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參數資料
| 型號： | 2SC1623 |
| 廠商： | NEC Corp. |
| 英文描述： | FILTER PLATE |
| 中文描述： | 音頻通用放大器NPN硅外延晶體管微型模具 |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SC1623 |
3
2SC1623
V
= 6.0 V
Pulsed
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.010.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
BE
- Base to Emitter Voltage - V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
I
C
T
A
5C
2
–
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
2 V
1 V
10000
2000
6 V
V
CE
=10 V
5000
1000
200
500
100
20
10
–0.1 –0.2
50
–0.5 –1
I
E
- Emitter Current - mA
–2
–5 –10 –20
–50 –100
f
T
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
I
C
= 50 · I
B
20
10
I
C
= 50 · I
B
20
10
0.1 0.2
1
0.5
I
C
- Collector Current - mA
2
5
10
20
50 100
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
V
B
V
C
V
CB
- Collector to Base Voltage - V
V
EB
- Emittor to Base Voltage - V
INPUT AND OUTPUT CAPACITANCE
vs. REVERSE VOLTAGE
C
i
C
o
f = 1.0 MHz
C
ib
(I
C
= 0)
C
ob
(I
E
= 0)
100
20
50
10
2
5
1
0.2
0.1
0.5
0.1 0.2
0.5
1
2
5
10
20
50 100
1000
800
600
400
200
0
h
f
h
FE
- DC Current Gain
SMALL SIGNAL CURRENT GAIN vs.
DC CURRENT GAIN
0
200
400
600
800
1000
V
CE
= 6.0 V
I
= 1.0 mA
f = 1.0 kHz
h
i
h
fe
- Small Signal Current Gain
INPUT IMPEDANCE VOLTAGE FEEDBACK
RATIO AND OUTPUT ADMITTANCE vs.
SMALL SIGNAL CURRENT GAIN
50
40
30
20
10
0
200
400
600
800
1000
V
CE
= 6.0 V
I
= 1.0 mA
f = 1.0 kHz
h
r
×
1
–
50
40
30
20
10
0
h
o
100
80
60
40
20
0
h
oe
h
re
h
ie
V
BE(sat)
V
CE(sat)
Pulsed
μ
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PDF描述 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC1623_0712 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SC1623_10 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN General Purpose Transistors |
| 2SC1623-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, TRANSISTOR, NPN |
| 2SC1623A-L4(T1B-AT) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC1623F | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Epitaxial Planar Transistor |
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