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參數資料
| 型號： | 2SC1515 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused |
| 中文描述： | 硅npn型三重擴散 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 28K |
| 代理商： | 2SC1515 |
2SC1515 (K)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
C
Tj
200
V
Collector to emitter voltage
200
V
150
V
Emitter to base voltage
5
V
Collector current
50
mA
Collector power dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CES
200
—
—
V
I
C
= 10
μ
A, R
BE
= 0
V
(BR)CEO
V
(BR)EBO
150
—
—
V
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
μ
A, I
C
= 0
Emitter to base breakdown
voltage
5
—
—
V
Collector cutoff current
I
CBO
h
FE
V
CE(sat)
—
—
0.1
μ
A
V
CB
= 20 V, I
E
= 0
V
CE
= 6 V, I
C
= 10 mA
I
C
= 10 mA, I
B
= 1 mA
DC current transfer ratio
30
—
300
Collector to emitter saturation
voltage
—
—
1.0
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
I
C
= 10 mA, I
B
= 1 mA
Gain bandwidth product
f
T
Cob
60
—
—
MHz
V
CE
= 6 V, I
C
= 10 mA
V
CB
= 6 V, I
E
= 0, f = 1 MHz
Collector output capacitance
—
—
10
pF
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC1515K | Silicon NPN Triple Diffused |
| 2SC1520 | NPN Triple Diffued Silicon Transistor |
| 2SC1521 | NPN Triple Diffued Silicon Transistor |
| 2SC1545 | High Gain Amp. & Switching Epitaxial Planar NPN Silicon Darlington Transistors |
| 2SC4032 | High Gain Amp. & Switching Epitaxial Planar NPN Silicon Darlington Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC1515(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SC1515K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC1515KTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Triple Diffused |
| 2SC1516 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC1518 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For high-frequency bias oscillation of tape recorders) |
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