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參數(shù)資料
| 型號： | 2SB955 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重擴(kuò)散硅進(jìn)步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 35K |
| 代理商： | 2SB955 |
2SB955(K)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
D
*
1
P
C
*
2
Tj
–120
V
Collector to emitter voltage
–120
V
Emitter to base voltage
–7
V
Collector current
–10
A
Collector peak current
–15
A
C to E diode forward current
10
A
Collector power dissipation
50
W
Junction temperature
150
°
C
°
C
Storage temperature
Notes: 1. Value at T
C
= 25
°
C
2. PW
≤
1 ms 1 shot
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
—
V
I
C
= –25 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
—
V
I
E
= –200 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
D
t
on
t
off
—
—
–100
μ
A
μ
A
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –5 A*
1
I
C
= –5 A, I
B
= –10 mA*
1
I
C
= –10 A, I
B
= –0.1 A*
1
I
C
= –5 A, I
B
= –10 mA*
1
I
C
= –10 A, I
B
= –0.1 A*
1
I
D
= 10 A*
1
V
CC
= –30 V
I
C
= –5 A, I
B1
= –I
B2
= –10 mA
—
—
–10
DC current transfer ratio
1000
—
20000
Collector to emitter saturation
—
—
–1.5
V
voltage
—
—
–3.0
V
Base to emitter saturation
—
—
–2.0
V
voltage
—
—
–3.5
V
C to E diode forward voltage
—
—
3.0
V
Turn on time
—
0.8
—
μ
s
μ
s
Turn off time
Note:
—
4.0
—
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB955(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 10A I(C) | TO-220AB |
| 2SB955K | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused |
| 2SB955-K(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SB956 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR C-62 -20V -1A 1W ECB SMD |
| 2SB956R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SC-62 |
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