參數(shù)資料
型號: 2SB772SL-T92-K
廠商: 友順科技股份有限公司
英文描述: PNP EPITAXIAL SILICON TRANSISTOR
中文描述: 進(jìn)步黨外延硅晶體管
文件頁數(shù): 2/4頁
文件大?。?/td> 104K
代理商: 2SB772SL-T92-K
2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R201-023.B
2
ABS OLUAT E MAX IUM RAT INGS
(Ta = 25
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
T
J
T
STG
RATINGS
-40
-30
-5
-7
-3
-0.6
0.5
+150
-40 ~ +150
UNIT
V
V
V
A
A
A
W
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Peak Collector Current
DC Collector Current
Base Current
Power Dissipation
Operating Temperature
Storage Temperature
ELECT RICAL CHARACT ERIS T ICS
(Ta= 25
, unless otherwise specified)
PARAMETER
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
Cob
TEST CONDITIONS
V
CB
=-30V,I
E
=0
V
EB
=-3V,Ic=0
V
CE
=-2V,Ic=-20mA
V
CE
=-2V,Ic=-1A
Ic=-2A,I
B
=-0.2A
Ic=-2A,I
B
=-0.2A
V
CE
=-5V,Ic=-0.1A
V
CB
=-10V,I
E
=0,f=1MHz
MIN
30
100
TYP
200
150
-0.3
-1.0
80
45
MAX
-1000
-1000
UNIT
nA
nA
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(Note 1)
400
-0.5
-2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Note 1: Pulse test: P
W
<300
μ
s, Duty Cycle<2%
V
V
MHz
pF
CLAS S IFICAT ION OF hFE2
RANK
RANGE
Q
P
E
100 ~ 200
160 ~ 320
200 ~ 400
相關(guān)PDF資料
PDF描述
2SB772S-T92-B PNP EPITAXIAL SILICON TRANSISTOR
2SB772S-T92-K PNP EPITAXIAL SILICON TRANSISTOR
2SB772S-TO92 PNP EPITAXIAL SILICON TRANSISTOR
2SB772S MEDIUM POWER LOW VOLTAGE TRANSISTOR
2SB772 MEDIUM POWER LOW VOLTAGE TRANSISTOR
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