參數(shù)資料
型號(hào)： 2SB772
廠商： NEC Corp.
英文描述： PNP SILICON POWER TRANSISTOR
中文描述： 進(jìn)步黨硅功率晶體管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 46K
代理商： 2SB772
UTC 2SB772
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-002,A
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772 is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882
TO-126
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation( Tc=25
°
C)
Collector Dissipation( Ta=25
°
C)
Collector Current(DC)
Collector Current(PULSE)
Base Current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
Collector Cut-Off Current
I
CBO
Emitter Cut-Off Current
I
EBO
DC Current Gain(note 1)
h
FE1
h
FE2
Collector-Emitter Saturation Voltage
V
CE
(sat)
Base-Emitter Saturation Voltage
V
BE
(sat)
Current Gain Bandwidth Product
Output Capacitance
Cob
Note 1:Pulse test:PW<300
μ
s,Duty Cycle<2%
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Pc
Ic
Ic
I
B
T
j
T
STG
VALUE
-40
-30
-5
10
1
-3
-7
-0.6
150
-55 ~ +150
UNIT
V
V
V
W
W
A
A
A
°
C
°
C
TEST CONDITIONS
V
CB
=-30V,I
E
=0
V
EB
=-3V,Ic=0
V
CE
=-2V,Ic=-20mA
V
CE
=-2V,Ic=-1A
Ic=-2A,I
B
=-0.2A
Ic=-2A,I
B
=-0.2A
V
CE
=-5V,Ic=-0.1A
V
CB
=-10V,I
E
=0,f=1MHz
MIN
30
100
TYP
200
150
-0.3
-1.0
80
45
MAX
-1000
-1000
400
-0.5
-2.0
UNIT
nA
nA
V
V
f
T
MHz
pF
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