參數(shù)資料
型號: 2SB715
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數(shù): 2/6頁
文件大?。?/td> 32K
代理商: 2SB715
2SB715, 2SB716, 2SB716A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SB715
2SB716
2SB716A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–100
–120
–140
V
Collector to emitter voltage
–100
–120
–140
V
Emitter to base voltage
–5
–5
–5
V
Collector current
–50
–50
–50
mA
Collector power dissipation
750
750
750
mW
Junction temperature
150
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SB715
2SB716
2SB716A
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–100 —
–120 —
–140 —
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–100 —
–120 —
–140 —
V
I
C
= –1 mA,
R
BE
=
Collector cutoff current
I
CBO
–0.5
μ
A
V
CB
= –80 V, I
E
= 0
–0.5
–0.5
μ
A
V
CB
= –100 V, I
E
= 0
DC current transfer ratio h
FE1
*
1
250
800
250
800
250
500
V
CE
= –12 V,
I
C
= –2 mA
h
FE2
125
125
125
V
CE
= –12 V,
I
C
= –10 mA
Base to emitter voltage
V
BE
–0.75 —
–0.75 —
–0.75 V
V
CE
= –12 V,
I
C
= –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
–0.2
–0.2
–0.2
V
I
C
= –10 mA,
I
B
= –1 mA
Gain bandwidth product f
T
150
150
150
MHz V
CE
= –12 V,
I
C
= –5 mA
Collector output
capacitance
Cob
1.8
1.8
1.8
pF
V
CB
= –25 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SB715, 2SB716 and 2SB716A are grouped by h
FE1
as follows.
D
E
2SB715, 2SB716 250 to 500
400 to 800
2SB716A
250 to 500
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PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
2SB715D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-92VAR
2SB715E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-92VAR
2SB716 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial
2SB716A 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial