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參數(shù)資料
| 型號(hào)： | 2SB649L-X-AB3-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 中文描述： | 雙極晶體管權(quán)力的一般用途 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2SB649L-X-AB3-R |
2SB649/A
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R204-006,D
T Y PICAL CHARACT ERIS T ICS
I
B
=0
-0.5mA
-1.0
-1.5
-2.0
-2.5
-3-3.0
-40
-55
-50
-45
T
C
=25
P
D
=20W
0
-10
-20
-30
-40
-50
0.2
0.4
0.6
0.8
1.0
Typical Output Characteristecs
Collector to Emitter Voltage, V
CE
(V)
C
C
(
Base to Emitter Voltage, V
BE
(V)
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1
-10
-100
-500
V
CE
=-5V
T7
2
-
Typical Transfer Characteristics
C
C
(
25
-25
1
50
100
150
200
250
300
-1
-10
-100
-1,000
Collector Current, I
C
(mA)
D
F
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
-1
-10
-100
-1,000
Collector Current, I
C
(mA)
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
C
V
C
T
C
=75
I
C
=10 I
B
25
-25
350
V
CE
=-5V
T
C
=-25
25
75
I
C
=10I
B
1
3
10
30
100 300 1,000
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current, I
C
(mA)
Base to Emitter Saturation Voltage
vs. Collector Current
B
V
B
10
30
Collector Current, I
C
(mA)
100
300
1,000
0
40
80
120
160
200
240
G
T
(
Gain Bandwidth Product
vs. Collector Current
V
CE
=5V
Ta=25
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SB649L-X-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649L-X-T6C-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649L-X-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649L-X-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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