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參數(shù)資料
| 型號(hào)： | 2SB601L |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|進(jìn)步黨| 100V的五（巴西）總裁| 5A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | 2SB601L |
Data Sheet D16131EJ3V0DS
2
2SB601
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
=
3 A, I
B1
=
3 mA, L = 1 mH
100
V
Collector to emitter voltage
V
CEX(SUS)1
I
C
=
3 A, I
B1
=
I
B2
=
3 mA,
V
BE(OFF)
= 5.0 V, L = 180
μ
H, clamped
100
V
Collector to emitter voltage
V
CEX(SUS)2
I
C
=
6 A, I
B1
=
12 mA, I
B2
= 3 mA,
V
BE(OFF)
= 5.0 V, L = 180
μ
H, clamped
100
V
Collector cutoff current
I
CBO
V
CB
=
100 V, I
E
= 0
10
μ
A
Collector cutoff current
I
CER
V
CE
=
100 V, R
BE
= 51
, Ta = 125
°
C
1.0
mA
Collector cutoff current
I
CEX1
V
CE
=
100 V, V
BE(OFF)
= 1.5 V
10
μ
A
Collector cutoff current
I
CEX2
V
CE
=
100 V, V
BE(OFF)
= 1.5 V,
Ta = 125
°
C
1.0
mA
Emitter cutoff current
I
EBO
V
EB
=
5.0 V, I
C
= 0
3.0
mA
DC current gain
h
FE1
*
V
CE
=
2.0 V, I
C
=
3.0 A
2,000
15,000
DC current gain
h
FE2
*
V
CE
=
2.0 V, I
C
=
5.0 A
500
Collector saturation voltage
V
CE(sat)
*
I
C
=
3.0 A, I
B
=
3.0 mA
1.5
V
Base saturation voltage
V
BE(sat)
*
I
C
=
3.0 A, I
B
=
3.0 mA
2.0
V
Turn-on time
t
on
0.5
μ
s
Storage time
t
stg
1.0
μ
s
Fall time
t
f
I
C
=
3.0 A, R
L
= 17
,
I
B1
=
I
B2
=
3.0 mA, V
CC
50 V
Refer to the test circuit.
1.0
μ
s
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h CLASSIFICATION
Marking
M
L
K
h
FE1
2,000 to 5,000
3,000 to 7,000
5,000 to 15,000
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
°
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| 2SB601-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SB605K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | SPAKVAR |
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