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參數(shù)資料
| 型號： | 2SB548 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 中文描述： | 進步黨/ NPN硅外延晶體管低頻功放 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 134K |
| 代理商： | 2SB548 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
FEATURES
Ideal for audio amplifier drivers with 30 W to 50 W output
High voltage
Available for small mount spaces due to small and thin package
Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
2SB548/
2SD414
2SB549/
2SD415
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
* PW
≤
10 ms, duty cycle
≤
50%
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
100/120
80/80
5.0/5.0
0.8/0.8
1.5/1.5
V
V
V
A
A
W
W
°
C
°
C
100/100
P
T
(Ta = 25
°
C)
P
T
(Tc = 25
°
C)
T
j
T
stg
1.0
10
150
55 to +150
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
MIN.
TYP.
MAX.
1.0/1.0
1.0/1.0
Unit
μ
A
μ
A
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
V
CB
=
80/80 V, I
E
= 0
V
EB
=
3.0/3.0 V, I
C
= 0
V
CE
=
5.0/5.0 V, I
C
=
2.0/2.0 mA*
V
CE
=
5.0/5.0 V, I
C
=
200/200 mA*
I
C
=
500/500 mA, I
B
=
50/50 mA*
I
C
=
500/500 mA, I
B
=
50/50 mA*
V
CE
=
5.0/5.0 V, I
C
=
100/100 mA
V
CB
=
10/10 V, I
E
= 0, f = 1.0 MHz
20
40
90
320
0.4/0.3
0.9/0.9
70/45
25/15
2.0/2.0
1.5/1.5
V
V
MHz
pF
*
h
FE2
CLASSIFICATION
Marking
h
FE2
S
R
Q
P
40 to 80
60 to 120
100 to 200
160 to 320
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB549 | PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SD414 | PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SD415 | PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SB548 | Audio Frequency Power Amplifier |
| 2SB549 | Audio Frequency Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB549 | 制造商:NEC 制造商全稱:NEC 功能描述:PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SB549Q | 制造商:NEC Electronics Corporation 功能描述:Bipolar Junction Transistor, PNP Type, TO-126VAR |
| 2SB550 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB551 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
| 2SB552 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 15A I(C) | TO-3 |
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