參數(shù)資料
型號(hào): 2SB1690
廠商: Rohm CO.,LTD.
英文描述: General purpose amplification(−12V, −2A)
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 75K
代理商: 2SB1690
2SB1690
Transistors
General purpose amplification(
12V,
2A)
1/2
2SB1690
!
Applications
!
External dimensions
(Unit : mm)
Low frequency amplifier
Deiver
!
Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
180mV
at I
C
=
1A / I
B
=
50mA
!
Packaging specifications
TL
3000
Type
Package
Code
Basic ordering
unit (pieces)
Taping
2SB1690
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
15
V
V
V
A
mW
°
C
°
C
12
6
2
A
4
500
150
55 to
+
150
Symbol
Limits
Unit
Single pulse Pw=1ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
I
CP
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Cob
Min.
15
12
6
270
120
15
100
100
680
180
V
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
V
CE
=
2V, I
C
=
200mA
I
C
=
1mA, I
B
=
50mA
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
V
V
nA
mV
nA
f
T
360
V
CE
=
2V, I
E
=
200mA, f
=
100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collerctor-emitter saturation voltage
Transition frequency
Output capacitance
Pulsed
ROHM : TSMT3
(1) Base
(2) Emitter
(3) Collector
0.7
0.16
0~0.1
0
0.85
(2)
(1)
2
1
0.4
(3)
2.9
1.9
0.95 0.95
1.0MAX
same dimensions
Abbreviated symbol : FV
相關(guān)PDF資料
PDF描述
2SB1694 General purpose amplification (−30V, −1A)
2SB1695K MS (MIL-C-5015) SERIES 97 3106B SPLIT SHELL STRAIGHT PLUGS, STRAIGHT BODY STYLE, SOLDER TERMINATION, 20 SHELL SIZE, 20-11 INSERT ARRANGEMENT, PLUG GENDER, 13 CONTACTS
2SB1695 Low frequency amplifier
2SB1697 Low Frequency Amplifier (-12V, -2A)
2SB1698 Low frequency amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1690KT146 功能描述:兩極晶體管 - BJT PNP 12V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1690TL 功能描述:兩極晶體管 - BJT PNP 12V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1691WL-TL-E 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,50V,1A,MPAK 制造商:Renesas 功能描述:Trans GP BJT PNP 50V 1A 3-Pin MPAK T/R
2SB169300L 功能描述:TRANS PNP 20VCEO 500MA MINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SB1694T106 功能描述:兩極晶體管 - BJT PNP 30V 1A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2