參數(shù)資料
型號(hào)： 2SB1624
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）)
中文描述： 6 A, 110 V, PNP, Si, POWER TRANSISTOR
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 24K
代理商： 2SB1624
51
h
FE
Rank O(5000to12000), P(6500to20000), Y(15000to30000)
I
C
–V
CE
Characteristics
(Typical)
–1mA
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–2
–6
–4
Collector-Emitter Voltage V
CE
(V)
C
C
(
I
B
=–0.1mA
–m
–0.4mA
–0.3mA
–0.2mA
0
–3
–2
–1
–1
Base Current I
B
(mA)
–0.5
–10
–5
–100
–50
C
C
(
–5A
I
C
=–3A
0
–6
–4
–2
0
–3
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
15CCsTm
2CCeep
–0.2
–0.1
–1
–0.5
–6
–5
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
500
200
10,000
40,000
1,000
5,000
Typ
(V
CE
=–4V)
–0.02
–0.1
–0.5
–6
–5
–1
100
5
,
000
10
,
000
500
1
,
000
50
,
000
Collector Current I
C
(A)
D
F
25C
–30C
125C
0.5
5
1
1
5
10
50
100
500 1000
2000
Time t(ms)
T
θ
j
(
0.02
0.1
0.05
0.5
1
5 6
60
40
0
20
100
120
80
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
Collector-Emitter Voltage V
CE
(V)
C
C
(
–5
–10
–50
–100
–200
–0.1
–0.05
–1
–0.5
–10
–20
–5
10ms
DC
100ms
Without Heatsink
Natural Cooling
60
40
20
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
Safe Operating Area
(Single Pulse)
θ
j-a
–t
Characteristics
f
T
–I
E
Characteristics
(Typical)
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2493)
Application :
Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1624
–110
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1624
–100
max
–100
max
–110
min
5000
min
–2.5
max
–3.0
max
100
typ
110
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=–110V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–5mA
I
C
=–5A, I
B
=–5mA
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
Darlington
2S B1624
(Ta=25°C)
(Ta=25°C)
I
Typical Switching Characteristics (Common Emitter)
R
L
(
)
6
–5
V
CC
(V)
–30
I
C
(A)
V
(V)
5
I
(mA)
5
t
on
(
μ
s)
1.1typ
t
stg
(
μ
s)
3.2typ
t
f
(
μ
s)
1.1typ
I
(mA)
–5
V
(V)
–10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
B
E
C
(70
)
Equivalent circuit
相關(guān)PDF資料
PDF描述
2SB1625 Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）)
2SB1626 Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）)
2SB1648 Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）)
2SB1700 PNP/NPN Epitaxial Planar Silicon Darlington Transistors
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