參數資料
型號: 2SB1386-R-AB3-C-R
廠商: 友順科技股份有限公司
英文描述: LOW FREQUENCY PNP TRANSISTOR
中文描述: 低頻PNP晶體管
文件頁數: 5/5頁
文件大小: 208K
代理商: 2SB1386-R-AB3-C-R
2SB1386
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R208-019,B
T Y PICAL CHARACTERICS (Cont.)
1000
-0.1
20
Emitter To Base Voltage, V
EB
(V)
Emitter Input Capacitance vs. Emitter-
Base Voltage
E
50
-0.2
-0.5
-2
-5
-1
100
200
-10
500
I
c
=0A
Ta=25
f=1MHz
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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2SB1386-R-AB3-E-R LOW FREQUENCY PNP TRANSISTOR
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相關代理商/技術參數
參數描述
2SB1386T100Q 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1386T100R 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1389 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1390(E) 制造商:Renesas Electronics Corporation 功能描述:
2SB1391(E) 制造商:Renesas Electronics Corporation 功能描述: