參數(shù)資料
型號(hào): 2SB1352
廠商: SANKEN ELECTRIC CO LTD
元件分類: 功率晶體管
英文描述: Silicon PNP Epitaxial Planar Transistor(Darlington)(硅PNP外延平面晶體管(達(dá)林頓))
中文描述: 12 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: FM100, TO-3PF, 3 PIN
文件頁數(shù): 1/1頁
文件大小: 25K
代理商: 2SB1352
42
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–20
–15
–2
–1
Collector-Emitter Voltage V
CE
(V)
–6
–5
–4
–3
C
C
(
I
B
=–10mA
–6mA
–3mA
–4mA
–2mA
–1mA
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
–3
–2
–1
–1
–100
–10
Base Current I
B
(mA)
C
C
(
–1A
–5A
I
C
=–10A
–0.3
–1
–20
–10
–5
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
800
10000
5000
1000
20000
Typ
–10
–50
–5
–2
–100
–0.05
–1
–0.5
–0.1
–10
–30
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
10m
1ms
Without Heatsink
Natural Cooling
60
40
20
3.5
00
50
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
–20
–10
–15
–5
0
–2.4
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
15 a ep
2CCeep
–(sTp
(V
CE
=–4V)
–0.3
–0.5
–1
–5
–20
–10
500
5000
1000
20000
10000
D
F
Collector Current I
C
(A)
25C
–30C
125C
0.05 0.1
5
10
0.5
1
20
120
80
0
40
200
240
160
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
0.3
0.5
5
1
1
10
100
1000
Time t(ms)
T
θ
j
(
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1352
–60
–60
–6
–12(
Pulse
–20)
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1352
–10
max
–10
max
–60
min
2000
min
–1.5
max
–2.0
max
130typ
170typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=–60V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–10A
I
C
=–10A, I
B
=–20mA
I
C
=–10A, I
B
=–20mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
Darlington
2S B1352
(Ta=25°C)
(Ta=25°C)
External Dimensions
FM100(TO3PF)
Silicon PNP Epitaxial Planar Transistor
Application :
Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
4
–10
R
L
(
)
I
C
(A)
V
(V)
5
I
(mA)
20
t
on
(
μ
s)
0.7typ
t
stg
(
μ
s)
1.5typ
t
f
(
μ
s)
0.6typ
I
(mA)
–20
V
(V)
–10
B
C
E
(2k
)(100
)
Equivalent circuit
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PDF描述
2SB1386L-P-AB3-B-R LOW FREQUENCY PNP TRANSISTOR
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