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參數(shù)資料
| 型號： | 2SB1260-P-TN3-K |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 功率晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 2SB1260-P-TN3-K |
2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R208-017,C
ABS OLUAT E MAX IUM RAT INGS
(Ta = 25
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
RATINGS
-80
-80
-5
-2
UNIT
V
V
V
A
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Peak Collector Current
(
single pulse, Pw=100ms)
DC Collector Current
-1
A
SOT-89
TO-252
0.5
1.9
+150
W
W
Power Dissipation
P
D
Operating Temperature
Storage Temperature
Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm
2
or larger.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
-40 ~ +150
ELECT RICAL CHARACT ERIS T ICS
(Ta= 25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
I
C
=-500mA, I
B
=-50mA
f
T
V
CE
= -5V, I
E
=50mA, f=30MHz
Cob
V
CB
=-10V, I
E
=0, f=1MHz
TEST CONDITIONS
I
C
= -50
A
I
C
= -1mA
I
E
= -50
A
V
CB
=-60V
V
EB
=-4V
V
CE
=-3V, I
OUT
=-0.1A
MIN
-80
-80
-5
82
TYP
100
25
MAX
-1
-1
390
-0.4
UNIT
V
V
V
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(Note 1)
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Note 1: Pulse test: P
W
<300
μ
s, Duty Cycle<2%
A
A
V
MHz
pF
CLAS S IFICAT ION OF h
FE
RANK
RANGE
P
Q
R
82 ~ 180
120 ~ 270
180 ~ 390
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB1260-P-TN3-R | POWER TRANSISTOR |
| 2SB1260-Q-AB3-B | POWER TRANSISTOR |
| 2SB1260-Q-AB3-K | POWER TRANSISTOR |
| 2SB1260-Q-AB3-R | POWER TRANSISTOR |
| 2SB1260-Q-TN3-B | POWER TRANSISTOR |
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