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參數(shù)資料
| 型號(hào)： | 2SB1202-T-TN3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | HIGH CURRENT SWITCHING APPLICATION |
| 中文描述： | 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | 2SB1202-T-TN3-R |
2SB1202
PNP PLANAR TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R217-005.B
T Y PICAL CHARACT ERIS T ICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1202-T-TN3-T | HIGH CURRENT SWITCHING APPLICATION |
| 2SB1240 | Medium power Transistor(-32V, -2A) |
| 2SB1277 | Medium power Transistor(-32V, -2A) |
| 2SB1188 | Medium power Transistor(-32V, -2A) |
| 2SB1188P | MEDIUM POWER TRANSISTOR(-32V, -2A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1203S | 制造商:SANYO Semiconductor Co Ltd 功能描述: |
| 2SB1203SE | 制造商:SANYO Semiconductor Co Ltd 功能描述: |
| 2SB1203S-E | 功能描述:兩極晶體管 - BJT BIP PNP 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1203S-H | 功能描述:兩極晶體管 - BJT BIP PNP 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1203S-H-TL-E | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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