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參數(shù)資料
| 型號： | 2SB1132T100R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SB1132T100R |
2SB1132 / 2SA1515S / 2SB1237
Transistors
Rev.B
2/4
Absolute maximum ratings (Ta=25
°C)
1 Single pulse, Pw=100ms
2 When mounted on a 40 40 0.7 mm ceramic board.
3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2or larger.
+ +
Parameter
VCBO
VCEO
VEBO
PC
Tj
Tstg
40
V
A(DC)
W
32
5
1
IC
A(Pulse)
2
0.5
2
0.3
1
1
2
3
2SB1132
2SA1515S
2SB1237
150
55 to +150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
C
Electrical characteristics (Ta=25
°C)
Transition frequency
Output capacitance
DC current
transfer ratio
VCE
=
3V, IC= 0.1A
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
5
82
0.2
150
20
0.5
390
0.5
30
VIC
=
50A
IC
=
1mA
IE
=
50A
VCB
=
20V
VEB
=
4V
IC/IB
=
500mA/50mA
VCE
=
5V, IE=50mA, f=30MHz
VCB
=
10V, IE=0A, f=1MHz
V
A
120
2SB1132, 2SB1237
2SA1515S
390
V
MHz
pF
Typ.
Max.
Unit
Conditions
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Packaging specifications and hFE
Package
Code
Basic ordering unit (pieces)
Taping
T100
TP
1000
5000
PQR
hFE
QR
2SB1132
2SA1515S
TU2
2500
PQR
2SB1237
Type
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1132T100Q | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1132T100P | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1237TU2P | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1132T100/P | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1132T100/R | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1132T113Q | 制造商:ROHM Semiconductor 功能描述: |
| 2SB1132T200Q | 制造商:ROHM Semiconductor 功能描述: |
| 2SB1132-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER TRANSISTOR |
| 2SB1132-X-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER TRANSISTOR |
| 2SB1132-X-TN3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER TRANSISTOR |
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