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參數(shù)資料
| 型號(hào)： | 2SB1109 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(外延PNP晶體管) |
| 中文描述： | 硅外延進(jìn)步黨（外延進(jìn)步黨晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SB1109 |
2SB1109, 2SB1110
2
Electrical Characteristics
(Ta = 25
°
C)
2SB1109
2SB1110
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
I
C
= –10
μ
A, I
E
= 0
Collector to base
breakdown voltage
V
(BR)CBO
–160 —
—
–200
—
—
V
Collector to emitter
breakdown voltage
V
(BR)CEO
–160 —
—
–200
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
—
—
–10
—
—
—
μ
A
μ
A
V
CB
= –140 V, I
E
= 0
V
CE
= –160 V, I
E
= 0
V
= –5 V, I
C
= –10
mA
—
—
—
—
—
–10
DC current tarnsfer
ratio
h
FE1
*
1
60
—
320
60
—
320
h
FE2
30
—
—
30
—
—
V
CE
= –5 V, I
C
= –1 mA
I
C
= –5 V, I
C
= –10 mA
I
= –30 mA, I
B
= –3
mA
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
—
—
–1.5
—
—
–1.5
V
V
CE(sat)
—
—
–2
—
—
–2
V
Gain bandwidth product f
T
—
140
—
—
140
—
MHz
V
= –5 V, I
C
= –10
mA
Collector output
capacitance
Note:
1. The 2SB1109 and 2SB1110 are grouped by h
FE1
as follows.
Cob
—
5.5
—
—
5.5
—
pF
V
= –10 V, I
E
= 0, f =
1 MHz
B
C
D
60 to 120
100 to 200
160 to 320
0
50
100
150
Ambient Temperature T
a
(
°
C)
C
0.0
1.5
1.0
Maximum Collector Dissipation Curve
Collector to emitter Voltage V
CE
(V)
C
C
0
Typical Output Characteristics
–20
–16
–12
–8
–4
–2
–4
–6
–8
–10
I
B
= 0
–10
μ
A
–20
–30
–50
–60
–80
–100
–110
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1110 | Silicon PNP Epitaxial(外延PNP晶體管) |
| 2SB1114 | PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
| 2SB1115 | FILTER PLATE |
| 2SB1115A | FILTER PLATE |
| 2SB1115AYM | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1109B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1109C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1109D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1110 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
| 2SB1110B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 |
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