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參數(shù)資料
| 型號： | 2SB1094 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER |
| 中文描述： | 進步黨硅外延晶體管低頻功率放大器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2SB1094 |
Data Sheet D16186EJ2V0DS
2
2SB1094
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
10
μ
A
Emitter cutoff current
I
EBO
V
EB
=
7.0 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
**
V
CE
=
5.0 V, I
C
=
50 mA
20
DC current gain
h
FE2
**
V
CE
=
5.0 V, I
C
=
0.5 A
40
100
200
Collector saturation voltage
V
CE(sat)
**
I
C
=
2.0 A, I
B
=
0.2 A
0.5
1.5
V
Base saturation voltage
V
BE(sat)
**
I
C
=
2.0 A, I
B
=
0.2 A
1.1
2.0
V
Collector capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1.0 MHz
70
pF
Gain bandwidth product
f
T
V
CE
=
5.0 V, I
C
=
0.1 A
20
MHz
** Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
40 to 80
60 to 120
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
T
T
Case Temperature T
C
(
°
C)
I
C
Ambient Temperature T
a
(
°
C)
C
C
Pulse Width PW (s)
Collector to Emitter Voltage V
CE
(V)
Tc = 25
C
(with infinite heatsink )
With infinite heatsink (Tc = 25
°
C)
Without heatsink
T
t
°
C
2-mm thick
aluminum
co ting
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SB1094K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SB1094L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SB1094M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
| 2SB1096 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB1097 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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