參數(shù)資料
型號： 2SB1073
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號晶體管
英文描述： 4000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, MINIPAK-3
文件頁數(shù)： 1/3頁
文件大?。?/td> 86K
代理商： 2SB1073
2SB1073
Silicon
PNP epitaxial planer
Transistors
Features
Low collector to emitter saturation voltage VCE(sat)
Large peak collector current ICP
Mini power type package
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-20
V
VCBO
Collector-Base Voltage
-30
V
VEBO
Emitter-Base Voltage
-7
V
ICP
Peak Collector Current
-7
A
IC
Collector Current
-4
A
PC
Collector Dissipation
1
W
TJ
Operating Junction Temperature
150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
-20
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10uAdc, IE=0)
-30
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
-7
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-30Vdc, IE=0Vdc)
---
-100
nAdc
IEBO
Emitter Cutoff Current
(VEB=-7Vdc, IC=0Vdc)
---
-100
nAdc
hFE
DC Current Gain (note 1)
(IC=-2Adc, VCE=-2Vdc) (note 2)
120
---
315
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-3Adc, IB=-0.1Adc) (note 2)
---
-0.6
-1
Vdc
fT
Current Gain-Bandwidth Product
(VCB=-6Vdc, IE=-50mAdc, f=200MHz)
---
120
---
MHz
Cob
Output Capacitance
(VCB=-20Vdc, f=1.0MHz, IE=0)
---
40
---
pF
Note: 1. hFE Rank Classification
Rank
Q
R
hFE
120~205
180~315
Marking Symbol
IQ
IR
2. Pulse measurement
Revision: 3
2007/03/01