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參數(shù)資料
| 型號(hào)： | 2SB1059 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92(1), 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 17K |
| 代理商： | 2SB1059 |
2SB1059
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
V
Emitter to base voltage
V
EBO
–6
V
Collector current
I
C
–1
A
Collector power dissipation
P
C
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–70
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
——
–1
AV
CB = –55 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.2
AV
EB = –6 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
320
V
CE = –2 V, IC = –0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.6
V
I
C = –1 A, IB = –0.1 A
Gain bandwidth product
f
T
—
65
—
MHz
V
CE = –2 V, IC = –10 mA
Collector output capacitance
Cob
—
35
—
pF
V
CB = –10 V, IE = 0, f = 1 MHz
Note:
1. The 2SB1059 is grouped by h
FE as follows.
BC
100 to 200
160 to 320
See characteristic curves of 2SB740.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1059B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92 |
| 2SB1059C | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92 |
| 2SB1061 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused Low Frequency Power Amplifier |
| 2SB1062 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Si PNP Epitaxial Plannar |
| 2SB1063 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:High Power Amplifier Complementary Pair with 2SD1499 |
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