參數(shù)資料
型號(hào): 2SB1059
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進(jìn)步黨
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 17K
代理商: 2SB1059
2SB1059
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–70
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–6
V
Collector current
–1
A
Collector power dissipation
0.75
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–70
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
V
I
C
= –1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–6
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
–1
μ
A
μ
A
V
CB
= –55 V, I
E
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –2 V, I
C
= –0.1 A
I
C
= –1 A, I
B
= –0.1 A
Emitter cutoff current
–0.2
DC current transfer ratio
100
320
Collector to emitter saturation
voltage
–0.6
V
Gain bandwidth product
f
T
Cob
65
MHz
V
CE
= –2 V, I
C
= –10 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
Collector output capacitance
Note:
1. The 2SB1059 is grouped by h
FE
as follows.
B
C
35
pF
100 to 200
160 to 320
See characteristic curves of 2SB740.
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