參數(shù)資料
型號(hào): 2SB1018A-O
元件分類: 功率晶體管
英文描述: 7 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-10R1A, 3 PIN
文件頁數(shù): 4/5頁
文件大?。?/td> 170K
代理商: 2SB1018A-O
2SB1018A
2006-11-21
4
Collector-emitter voltage VCE (V)
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (A)
Base-emi
tter
sa
tura
tion
vol
tage
V
BE
(sat)
(V)
Base-emitter voltage VBE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.3
0.5
1
3
5
10
20
3
10
30
100
10 ms*
IC max (pulsed)*
IC max
(continuous)
1 ms*
100 ms*
DC operation
Tc = 25°C
VCEO max
Common emitter
VCE = 1 V
0
2
4
6
0.8
1.6
2.4
3.2
25
55
Tc = 100°C
0.1
0.03
Common emitter
IC/IB = 10
25
100
Tc = 55°C
0.1
0.3
1
3
10
0.3
0.5
1
3
5
10
VBE (sat) – IC
rth – tw
Pulse width tw (s)
T
ransie
nt
th
ermal
r
esi
st
an
ce
r th
C/W)
0.001
0.01
0.1
1
10
100
1000
0.1
Curves apply only to limited areas of thermal resistance.
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
1
10
100
(2)
(1)
相關(guān)PDF資料
PDF描述
2SB1020A 7 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB1026DMUL 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1026DLUR 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1026DLTR 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1026DMUR 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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