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參數(shù)資料
| 型號： | 2SA94 |
| 英文描述： | High voltage transistors |
| 中文描述： | 高壓晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 455K |
| 代理商： | 2SA94 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A94
TRANSISTOR
PNP
FEATURES
Power dissipation
P
CM
: 0.625 W
Collector current
I
CM:
-0.2 A
Collector-base voltage
V
(BR)CBO
: -400 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
unless otherwise specified
Tamb=25
to +150
Tamb=25
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V (BR)
CBO
Ic= -100
A
I
E
=0
-400
V
Collector-emitter breakdown voltage
V (BR)
CEO
I
C
= -1 mA I
B
=0
-400
V
Emitter-base breakdown voltage
V (BR)
EBO
I
E
=-100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-400 V, I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
=-400 V, I
B
=0
-5
A
Emitter cut-off current
I
EBO
V
EB
= -4 V, I
C
=0
-0.1
A
h
FE 1
V
CE
=-10V, I
C
=-10 mA
80
300
h
FE 2
V
CE
=-10V, I
C
=-1mA
70
DC current gain
h
FE 3
V
CE
=-10V, I
C
=-100 mA
60
V
CE
(sat)
I
C
=-10 mA I
B
=-1mA
-0.2
V
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-50 mA I
B
=-5mA
-0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-10 mA I
B
= -1 mA
-0.75
V
Transition frequency
f
T
V
CE
=-20V
f =30MHz
I
C
=-10mA
50
MHz
1
2
3
TO
92
1.EMITTER
2.BASE
3. COLLECTOR
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