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參數(shù)資料
| 型號： | 2SA778(K) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2SA778(K) |
2SA778(K), 2SA778A(K)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SA778(K)
2SA778A(K)
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–150
–180
V
Collector to emitter voltage
–150
–180
V
Emitter to base voltage
–5
–5
V
Collector current
–50
–50
mA
Collector power dissipation
200
200
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SA778(K)
2SA778A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–150 —
—
–180
—
—
V
I
C
= –50
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CER
–150 —
—
–180
—
—
V
I
C
= –50
μ
A,
R
BE
= 30 k
V
CB
= –100 V, I
E
= 0
V
CB
= –150 V, I
E
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –3 V,
I
E
= –15 mA
I
C
= –15 mA,
I
B
= –1 mA
I
C
= –15 mA,
I
B
= –1 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Collector cutoff current
I
CBO
—
—
–1.0
—
—
—
μ
A
μ
A
μ
A
—
—
—
—
—
–1.0
Emitter cutoff current
I
EBO
—
—
–1.0
—
—
–1.0
DC current transfer ratio h
FE
30
100
—
40
100
200
Collector to emitter
saturation voltage
V
CE(sat)
—
–0.3
–1.0
—
–0.3
–1.0
V
Base to emitter
saturation voltage
V
BE(sat)
—
–0.77 –1.0
—
–0.77 –1.0
V
Collector output
capacitance
Cob
—
—
10
—
—
10
pF
Gain bandwidth product f
T
—
50
—
—
50
—
MHz
V
CE
= –3 V,
I
C
= –15 mA
V
CC
= –10.3 V
I
C
= 10 I
= –10
I
B2
= –10 mA
V
CC
= –10 V,
I
C
=–17 mA
I
B1
= –1mA,
I
B2
= –12 mA
Turn on time
t
on
t
off
—
135
—
—
135
—
ns
Turn off time
—
1.7
—
—
1.7
—
μ
s
Storage time
t
stg
—
—
1.0
—
—
1.0
μ
s
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