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參數(shù)資料
| 型號(hào)： | 2SA684 |
| 廠(chǎng)商： | 友順科技股份有限公司 |
| 英文描述： | - |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 68K |
| 代理商： | 2SA684 |
UTC 2SA684
PNP EPITAXIAL PLANAR TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R202-002,A
PNP EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2SA684 is power amplifier and driver.
FEATURES
*Automatic insertion by radial taping possible.
*Complementary pair with 2SC1384
TO-92L
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
Collector Current(DC)
Collector Dissipation( Ta=25
°
C)
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
Collector Cut-Off Current
I
CBO
Collector-Base Voltage
V
CBO
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
V
EBO
DC Current Gain
h
FE1
h
FE2
Collector-Emitter Saturation Voltage
V
CE
(sat)
Base-Emitter Saturation Voltage
V
BE
(sat)
Current Gain Bandwidth Product
Output Capacitance
Cob
SYMBOL
V
CBO
V
CEO
V
EBO
Icp
Ic
Pc
T
j
T
STG
VALUE
60
50
5
1.5
1
1
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°
C
°
C
TEST CONDITIONS
V
CB
=20V,I
E
=0
Ic=10
μ
A,I
E=0
Ic=2mA,I
B
=0
I
E
=10
μ
A,Ic=0
V
CE
=10V,Ic=500mA
V
CE
=5V,I
B
=1A
Ic=0.5A,I
B
=50mA
Ic=0.5A,I
B
=50mA
V
CE
=10V,I
B
=50mA,f=200MHz
V
CB
=10V,I
E
=0,f=1MHz
MIN
TYP
0.2
0.85
200
20
MAX UNIT
0.1
340
0.4
1.2
30
μ
A
V
V
V
60
50
5
85
50
V
V
f
T
MHz
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA684_09 | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| 2SA684_11 | 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SA684G-X-AB3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| 2SA684G-X-T9N-B | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| 2SA684G-X-T9N-K | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:PNP SILICON TRANSISTOR |
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