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參數(shù)資料
| 型號(hào)： | 2SA2044TP-FA |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | 2SA2044TP-FA |
2SA2039 / 2SC5706
No.6912-1/5
Features
DC-DC converter, relay drivers, lamp drivers,
motor drivers, strobes.
Features
Adoption of FBET, MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6912
2SA2039 / 2SC5706
High Current Switching Applications
Package Dimensions
unit : mm
2045B
30101 TS IM TA-3232
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Epitaxial Planar Silicon Transistors
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
4
5.0
0.85
0.7
0.6
1
5
7
0
1
7
0.5
1.2
2.3
0.5
1
2
3
2.3
2.3
[2SA2039 / 2SC5706]
[2SA2039 / 2SC5706]
Package Dimensions
unit : mm
2044B
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
5.0
4
2.3
0.5
1
5
0
7
1
2
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
3
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| 2SA2047 | 制造商:ROHM 制造商全稱:Rohm 功能描述:MEDIUM POWER TRANSISTOR (-30V,-0.5A) |
| 2SA2048 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium power transistor (−30V, −1.0A) |
| 2SA2048K | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium power transistor (−30V, −1.0A) |
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