參數(shù)資料
型號(hào): 2SA1767Q
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: 70 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, TO-92-B1, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 235K
代理商: 2SA1767Q
Transistors
1
Publication date: January 2003
SJC00030BED
2SA1767
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473A
■ Features
High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
300
V
Collector-emitter voltage (Base open)
VCEO
300
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
70
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
300
V
Emitter-base voltage (Collector open)
VEBO
IE = 1 A, IC = 0
5V
Forward current transfer ratio *
hFE
VCE =
10 V, I
C =
5 mA
30
150
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.6
V
Transition frequency
fT
VCB = 10 V, IE = 10 mA, f = 200 MHz
50
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
7
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Rank
P
Q
hFE
30 to 100
60 to 150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料
PDF描述
2SA1779-A SMALL SIGNAL TRANSISTOR
2SA1779-C SMALL SIGNAL TRANSISTOR
2SA1798S 8 A, 20 V, PNP, Si, POWER TRANSISTOR
2SA1798 8 A, 20 V, PNP, Si, POWER TRANSISTOR
2SA1798R 8 A, 20 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1767-Q 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR
2SA1767QTA 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR
2SA1768S-AN 功能描述:兩極晶體管 - BJT BIP PNP 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1768T-AN 功能描述:兩極晶體管 - BJT BIP PNP 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1770S-AN 功能描述:兩極晶體管 - BJT BIP PNP 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2