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參數(shù)資料
| 型號(hào)： | 2SA1193K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial, Darlington |
| 中文描述： | 硅外延進(jìn)步黨，達(dá)林頓 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SA1193K |
2SA1193(K)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
–60
V
Collector to emitter voltage
–60
V
Emitter to base voltage
–7
V
Collector current
–0.5
A
Collector peak current
–1.0
A
Collector power dissipation
0.9
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–60
—
—
V
I
C
= –1 mA, R
BE
=
∞
Collector cutoff current
I
CBO
I
EBO
h
FE
V
CE(sat)
—
—
–1.0
μ
A
μ
A
V
CB
= –60 V, I
E
= 0
V
EB
= –7 V, I
C
= 0
V
CE
= –3 V, I
C
= –250 mA*
1
I
C
= –250 mA, I
B
= –0.5 mA*
1
Emitter cutoff current
—
—
–1.0
DC current transfer ratio
2000
—
—
Collector to emitter saturation
voltage
—
—
–1.5
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
–2.0
V
Turn on time
t
on
t
off
—
0.3
—
μ
s
μ
s
I
C
= –250 mA
I
B1
= –I
B2
= –0.5 mA
Turn off time
Note:
—
0.9
—
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1193KTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial, Darlington |
| 2SA1194 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-126 -60V -1A 8W ECB |
| 2SA1194(K) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 1A I(C) | TO-126 |
| 2SA1194K | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126 -60V -1A 1W ECB |
| 2SA1195 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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