參數(shù)資料
型號: 2SA1188E
元件分類: 小信號晶體管
英文描述: 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: SC-43A, TO-92(1), 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 172K
代理商: 2SA1188E
2SA1188
Rev.3.00 Aug 10, 2005 page 3 of 6
Main Characteristics
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (1)
–20
–16
–12
–8
–4
0
–20
–40
–60
–80
–100
IB = 0
–5
A
–10
–15
–20
–25
–30
Typical Output Characteristics (2)
Collector to Emitter Voltage VCE (V)
0–4
–8
–12
–16
–20
Collector
Current
I
C
(mA)
–10
–8
–6
–4
–2
IB = 0
–2
A
–4
–6
–8
–10
–12
–14
–16
–18
–20
Typical Transfer Characteristics
Collector
Current
I
C
(mA)
–0.1
–1.0
–10
–100
Base to Emitter Voltage VBE (V)
0
–0.2
–0.4
–0.6
–0.8
–1.0
VCE = –6 V
Pulse
Ta = 75
°C
25
–25
Collector Cutoff Current vs.
Collector to Base Voltage
Collector to Base Voltage VCB (V)
0
–20
–40
–60
–80
–100
Collector
cutoff
current
I
CBO
(pA)
–1
–10
–100
–1,000
–10.000
Ta = 75
°C
IE = 0
25
–25
Collector Cutoff Current vs.
Collector to Emitter Voltage
Collector to Emitter Voltage VCE (V)
0
–20
–40
–60
–80
–100
Collector
cutoff
current
I
CEO
(nA)
–0.1
–1.0
–10
–100
–1,000
Ta = 75
°C
25
–25
RBE = ∞
0
50
100
150
Ambient Temperature Ta (°C)
Collector
power
dissipation
P
c
(mW)
Maximum Collector Dissipation Curve
600
400
200
相關(guān)PDF資料
PDF描述
2SA1188E 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1189DRF 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1189ERF 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1189DRR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1188ERR 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1188ETZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1189 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial
2SA1189D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
2SA1189E 制造商:Renesas Electronics Corporation 功能描述:
2SA1190 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial