參數資料
型號: 2SA1160B
元件分類: 小信號晶體管
英文描述: 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN
文件頁數: 1/4頁
文件大?。?/td> 150K
代理商: 2SA1160B
2SA1160
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed (Note 1)
ICP
4
A
Base current
IB
2
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse width
= 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
相關PDF資料
PDF描述
2SA1160A 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1162-O 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1162-Y 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1162GRTE85L 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1163-GR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
相關代理商/技術參數
參數描述
2SA1160B(F) 制造商:Toshiba America Electronic Components 功能描述:
2SA1160-B(TE6,F,M) 功能描述:兩極晶體管 - BJT PNP 10V 2A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1160C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 2A I(C) | TO-92
2SA1161 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORTO-92 -15V -.03A .2W BEC
2SA1162 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR