參數(shù)資料
型號: 2SA1122
元件分類: 小信號晶體管
英文描述: 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: MPAK-3
文件頁數(shù): 4/7頁
文件大?。?/td> 38K
代理商: 2SA1122
2SA1122
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–55
V
Collector to emitter voltage
V
CEO
–55
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–55
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–0.5
AV
CB = –30 V, IE = 0
Emitter cutoff current
I
EBO
–0.5
AV
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
160
800
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
–0.5
V
I
C = –10 mA, IB = –1 mA
Base to emitter voltage
V
BE
–0.75
V
CE = –12 V, IC = –2 mA
Note:
1. The 2SA1122 is grouped by h
FE as follows.
Grade
B
C
D
Mark
CC
CD
CE
h
FE
160 to 320
250 to 500
400 to 800
See characteristic curves of 2SA836.
相關(guān)PDF資料
PDF描述
2SA1122D 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1122C 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1122C 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1127S 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1129 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1122B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SA1122C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SOT-346
2SA1122CCTL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1122CD 制造商:Renesas Electronics Corporation 功能描述:
2SA1122CDTL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial