參數(shù)資料
型號: 2SA1121
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數(shù): 2/5頁
文件大小: 24K
代理商: 2SA1121
2SA1121
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–35
V
Collector to emitter voltage
–35
V
Emitter to base voltage
–4
V
Collector current
–500
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–35
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–35
V
I
C
= –1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–4
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
CE(sat)
–0.5
μ
A
V
CB
= –20 V, I
E
= 0
I
C
= –150 mA, I
B
= –15 mA
Collector to emitter saturation
voltage
–0.2
–0.6
V
DC current transfer ratio
h
FE
*
1
h
FE
60
320
V
CE
= –3 V, I
C
= –10 mA
V
= –3 V, I
C
= –500 mA
(Pulse test)
10
Base to emitter voltage
Note:
1. The 2SA1121 is grouped by h
FE
as follows.
Grade
B
V
BE
–0.64
V
V
CE
= –3 V, I
C
= –10 mA
C
D
Mark
SB
SC
SD
h
FE
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SA673.
相關(guān)PDF資料
PDF描述
2SA1122 Silicon PNP Epitaxial
2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
2SA1129K 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2SA1129L TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB
2SA1129M 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1121_11 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1121B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SA1121C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SA1121D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SA1121SB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23