參數(shù)資料
型號(hào): 2SA1037S
廠商: RECTRON LTD
元件分類(lèi): 小信號(hào)晶體管
英文描述: 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 289K
代理商: 2SA1037S
RECTRON
SEMICONDUCTOR
FEATURES
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
2SA1037
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
OC ambient temperature unless otherwise specified.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Emitter cut-off current (VEB= -6V, IC=0)
DC current gain (VCE= -6V, IC= -1mA)
Collector cut-off current (VCB= -60V, IE=0)
Collector-emitter saturation voltage (IC= -50mA, IB= -5mA)
Transistion frequency (VCE= -12V, IC= -2mA, f= 30MHz)
CHARACTERISTICS
SYMBOL
UNITS
-
-0.1
560
m
A
m
A
V
MHz
Collector-base breakdown voltage (IC= -50mA, IE=0)
Collector-emitter breakdown voltage (IC= -1mA, IB=0)
Emitter-base breakdown voltage (IE= -50mA, IC=0)
CLASSIFICATION OF hFE
RANK
Range
Marking
Q
120-270
FQ
V(BR)CBO
V(BR)CEO
V(BR)EBO
IEBO
hFE
ICBO
VCE(sat)
fT
R
MAX.
-
TYP.
-60
-50
-6
-
120
MIN.
S
180-390
FR
270-560
FS
0.055(1.40)
0.047(1.20)
-
-0.1
-
120
-
-0.5
BASE
EMITTER
COLLECTOR
*
Power dissipation
PCM :
0.2
W (Tamb=25OC)
Collector current
ICM :
-0.15
A
Collector-base voltage
V(BR)CBO :
-60
V
Operating and storage junction temperature range
TJ,Tstg: -55OCto+150OC
1
2
3
2
3
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
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