- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369067 > 2SA1030 (Hitachi,Ltd.) Silicon PNP Epitaxial(小信號晶體管) PDF資料下載
參數(shù)資料
| 型號： | 2SA1030 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(小信號晶體管) |
| 中文描述： | 硅外延進步黨（小信號晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 24K |
| 代理商： | 2SA1030 |
2SA1029, 2SA1030
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SA1029
2SA1030
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
–30
–55
V
Collector to emitter voltage
–30
–50
V
Emitter to base voltage
–5
–5
V
Collector current
–100
–100
mA
Emitter current
100
100
mA
Collector power dissipation
300
300
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SA1029
2SA1030
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–30
—
—
–55
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–30
—
—
–50
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
—
—
–0.5
—
—
–0.5
μ
A
μ
A
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CB
= –12 V,
I
C
= –2 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Emitter cutoff current
—
—
–0.5
—
—
–0.5
DC current trnsfer ratio
100
—
500
100
—
320
Base to emitter voltage
V
BE
—
—
–0.8
—
—
–0.8
V
Collector to emitter
saturation voltage
V
CE(sat)
—
—
–0.2
—
—
–0.2
V
Gain bandwidth product f
T
200
280
—
200
280
—
MHz
Collector output
capacitance
Note:
Cob
—
3.3
4.0
—
3.3
4.0
pF
1. The 2SA1029 and 2SA1030 are grouped by h
FE
as follows.
B
C
D
2SA1029
100 to 200
160 to 320
250 to 500
2SA1030
100 to 200
160 to 320
—
See characteristic curves of 2SA1031 and 2SA1032.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1156K | TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 500MA I(C) | TO-126 |
| 2SA1156L | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA1156M | TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 500MA I(C) | TO-126 |
| 2SA1156N | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA1156 | PNP SILICON POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1030B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1030BTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1030C | 制造商:Renesas Electronics 功能描述:Trans GP BJT PNP 50V 0.1A 3-Pin TO-92 |
| 2SA1030CTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1031 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 -30V -.1A .2W ECB |
發(fā)布緊急采購，3分鐘左右您將得到回復。