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參數(shù)資料
| 型號(hào)： | 2SA1029 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(小信號(hào)晶體管) |
| 中文描述： | 硅外延進(jìn)步黨（小信號(hào)晶體管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | 2SA1029 |
2SA1029, 2SA1030
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SA1029
2SA1030
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
–30
–55
V
Collector to emitter voltage
–30
–50
V
Emitter to base voltage
–5
–5
V
Collector current
–100
–100
mA
Emitter current
100
100
mA
Collector power dissipation
300
300
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SA1029
2SA1030
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–30
—
—
–55
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–30
—
—
–50
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
—
—
–0.5
—
—
–0.5
μ
A
μ
A
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CB
= –12 V,
I
C
= –2 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Emitter cutoff current
—
—
–0.5
—
—
–0.5
DC current trnsfer ratio
100
—
500
100
—
320
Base to emitter voltage
V
BE
—
—
–0.8
—
—
–0.8
V
Collector to emitter
saturation voltage
V
CE(sat)
—
—
–0.2
—
—
–0.2
V
Gain bandwidth product f
T
200
280
—
200
280
—
MHz
Collector output
capacitance
Note:
Cob
—
3.3
4.0
—
3.3
4.0
pF
1. The 2SA1029 and 2SA1030 are grouped by h
FE
as follows.
B
C
D
2SA1029
100 to 200
160 to 320
250 to 500
2SA1030
100 to 200
160 to 320
—
See characteristic curves of 2SA1031 and 2SA1032.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1029B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1029BTZ | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1029C | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1029CTZ | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1029D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
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