- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369067 > 2SA1020L-O-T9N-K (UNISONIC TECHNOLOGIES CO LTD) SILICON PNP EPITAXIAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SA1020L-O-T9N-K |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SILICON PNP EPITAXIAL TRANSISTOR |
| 中文描述： | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, TO-92NL, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 207K |
| 代理商： | 2SA1020L-O-T9N-K |
2SA1020
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-007,B
ABS OLUT E MAX IMUM RAT INGS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
RATINGS
-50
-50
-5
-2
900
500
150
-55 ~ +150
UNIT
V
V
V
A
mW
mW
°
C
°
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
TO-92NL
SOT-89
Collector Power Dissipation
P
C
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
t
ON
t
STG
TEST CONDITIONS
Ic=-10mA, I
B
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-1.5A
Ic=-1A, I
B
=-0.05A
Ic=-1A, I
B
=-0.05A
V
CE
=-2V, Ic=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-50
70
40
TYP MAX
UNIT
V
μ
A
μ
A
Collector to Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
-1.0
-1.0
240
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Storage Time
Switching Time
Fall Time
-0.5
-1.2
V
V
100
40
0.1
1.0
0.1
MHz
pF
μ
s
μ
s
μ
s
t
F
CLAS S IFICAT ION OF h
FE1
RANK
RANGE
O
Y
70 - 140
120 - 240
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1020L-O-T9N-R | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-X-AB3-R | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-X-T9N-B | SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020 | PNP EPITAXIAL SILICON TRANSISTOR |
| 2SA1020 | TO-92MOD Plastic-Encapsulated Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1020L-O-T9N-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-X-T9N-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-X-T9N-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
| 2SA1020L-Y-AB3-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。